Datasheet > STGW10M65DF2

STGW10M65DF2

更新时间： 2023-12-20 18:44:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
16页	936K
描述
沟槽栅场截止IGBT，M系列，650 V、10 A，低损耗

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STGW10M65DF2 数据手册

STGW10M65DF2

Trench gate field-stop IGBT, M series 650 V, 10 A

low-loss in TO-247 package

Datasheet - production data

Features



6 µs of short-circuit withstand time

V_CE(sat)= 1.55 V (typ.) @ I_C= 10 A

Tight parameter distribution

Safer paralleling

Positive V_CE(sat)temperature coefficient

Low thermal resistance

Soft and very fast recovery antiparallel diode

Maximum junction temperature: T_J= 175 °C

Applications

TO-247



Motor control

UPS

PFC

Figure 1: Internal schematic diagram

General purpose inverter

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series

IGBTs, which represent an optimal balance

between inverter system performance and

efficiency where low-loss and short-circuit

functionality are essential. Furthermore, the

positive V_CE(sat)temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGW10M65DF2

G10M65DF2

TO-247

Tube

April 2017

DocID029083 Rev 2

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

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