是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-247AC | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 8 weeks |
风险等级: | 0.96 | Is Samacsys: | N |
最大集电极电流 (IC): | 42 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | 门极发射器阈值电压最大值: | 5.75 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-247AC |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 140 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 272 ns | 标称接通时间 (ton): | 32 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
STGW19NC60H | STMICROELECTRONICS |
完全替代 |
19 A - 600 V - very fast IGBT | |
STGW19NC60W | STMICROELECTRONICS |
类似代替 |
Ultra fast "W" series | |
APT15GT60BRDQ1G | MICROSEMI |
功能相似 |
Power Semiconductors Power Modules |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGW19NC60W | STMICROELECTRONICS |
获取价格 |
Ultra fast "W" series | |
STGW19NC60WD | STMICROELECTRONICS |
获取价格 |
N-channel 600V - 19A - TO-220 - TO-247 Ultra | |
STGW20H60DF | STMICROELECTRONICS |
获取价格 |
600 V、20 A高速沟槽栅场截止IGBT | |
STGW20H65FB | STMICROELECTRONICS |
获取价格 |
650 V、20 A高速沟槽栅场截止HB系列IGBT | |
STGW20IH125DF | STMICROELECTRONICS |
获取价格 |
1250 V、20 A IH系列沟槽栅场截止IGBT | |
STGW20NB60H | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT | |
STGW20NB60HD | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT | |
STGW20NB60K | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT P | |
STGW20NB60KD | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH? IGBT | |
STGW20NC60V | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 30A - 600V - TO-220/TO-247 Very Fast PowerMESH IGBT |