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STGW19NC60HD PDF预览

STGW19NC60HD

更新时间: 2024-09-28 03:15:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
18页 512K
描述
19 A - 600 V - very fast IGBT

STGW19NC60HD 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-247AC包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:0.96Is Samacsys:N
最大集电极电流 (IC):42 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:5.75 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):140 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):272 ns标称接通时间 (ton):32 ns
Base Number Matches:1

STGW19NC60HD 数据手册

 浏览型号STGW19NC60HD的Datasheet PDF文件第2页浏览型号STGW19NC60HD的Datasheet PDF文件第3页浏览型号STGW19NC60HD的Datasheet PDF文件第4页浏览型号STGW19NC60HD的Datasheet PDF文件第5页浏览型号STGW19NC60HD的Datasheet PDF文件第6页浏览型号STGW19NC60HD的Datasheet PDF文件第7页 
STGB19NC60HD - STGF19NC60HD  
STGP19NC60HD - STGW19NC60HD  
19 A - 600 V - very fast IGBT  
Features  
Low on-voltage drop (V  
)
CE(sat)  
Low C  
/ C  
ratio (no cross-conduction  
IES  
3
3
RES  
2
1
1
susceptibility)  
PAK  
Very soft ultra fast recovery anti-parallel diode  
TO-220  
Applications  
High frequency motor controls  
3
3
2
1
2
SMPS and PFC in both hard switch and  
1
resonant topologies  
TO-247  
TO-220FP  
Motor drives  
Description  
Figure 1.  
Internal schematic diagram  
This IGBT utilizes the advanced Power MESH™  
process resulting in an excellent trade-off  
between switching performance and low on-state  
behavior.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
Packaging  
STGB19NC60HDT4  
STGF19NC60HD  
STGP19NC60HD  
STGW19NC60HD  
GB19NC60HD  
GF19NC60HD  
GP19NC60HD  
GW19NC60HD  
Tape and reel  
Tube  
TO-220FP  
TO-220  
Tube  
TO-247  
Tube  
July 2008  
Rev 3  
1/18  
www.st.com  
18  

STGW19NC60HD 替代型号

型号 品牌 替代类型 描述 数据表
STGW19NC60H STMICROELECTRONICS

完全替代

19 A - 600 V - very fast IGBT
STGW19NC60W STMICROELECTRONICS

类似代替

Ultra fast "W" series
APT15GT60BRDQ1G MICROSEMI

功能相似

Power Semiconductors Power Modules

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