Datasheet > STGW20H60DF

STGW20H60DF

更新时间： 2023-12-20 18:44:25

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
17页	1293K
描述
600 V、20 A高速沟槽栅场截止IGBT

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STGW20H60DF 数据手册

STGW20H60DF,

STGWT20H60DF

600 V, 20 A high speed

trench gate field-stop IGBT

Datasheet

production data

Features

• High speed switching

• Tight parameters distribution

• Safe paralleling

TAB

• Low thermal resistance

• Short-circuit rated

• Ultrafast soft recovery antiparallel diode

TO-247

TO-3P

Applications

• Motor control

• UPS, PFC

Figure 1. Internal schematic diagram

Description

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. This IGBT series offers the optimum

compromise between conduction and switching

losses, maximizing the efficiency of very high

frequency converters. Furthermore, a positive

C (2, TAB)

G (1)

V_CE(sat)temperature coefficient and very tight

parameter distribution result in easier paralleling

operation.

E (3)

Table 1. Device summary

Order codes

Marking

Packages

Packaging

STGW20H60DF

STGWT20H60DF

GW20H60DF

TO-247

TO-3P

Tube

GWT20H60DF

June 2013

DocID024745 Rev 1

1/17

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...17

中文翻译

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