Datasheet > STGW15M120DF3

STGW15M120DF3

更新时间： 2024-09-29 14:57:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
19页	1048K
描述
1200 V、15 A沟槽栅场截止低损耗M系列IGBT

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中文翻译

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STGW15M120DF3 数据手册

STGW15M120DF3

STGWA15M120DF3

Trench gate field-stop IGBT, M series

1200 V, 15 A low loss

Datasheet

production data

Features

• 10 µs of short-circuit withstand time

• V_CE(sat)= 1.85 V (typ.) @ I_C= 15 A

• Tight parameters distribution

• Safer paralleling

• Low thermal resistance

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• Soft and fast recovery antiparallel diode

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Applications

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Industrial drives

UPS

Solar

Welding

Figure 1.Internal schematic diagram

Description

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This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series of

IGBTs, which represent an optimum compromise

in performance to maximize the efficiency of

inverter systems where low-loss and short circuit

capability are essential. Furthermore, a positive

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V_CE(sat)temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

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Table 1. Device summary

Order code

Marking

Package

Packaging

STGW15M120DF3

STGWA15M120DF3

G15M120DF3

TO-247

Tube

TO-247 long leads

October 2014

DocID026222 Rev 2

1/19

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...19

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