Datasheet > STGP8M120DF3

STGP8M120DF3

更新时间： 2023-12-20 18:44:58

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
15页	337K
描述
1200 V、8 A沟槽栅场截止低损耗M系列IGBT，TO-220封装

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STGP8M120DF3 数据手册

STGP8M120DF3

Datasheet

Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package

Features

•

10 µs of minimum short-circuit withstand time

V_CE(sat)= 1.85 V (typ.) @ I_C= 8 A

Tight parameter distribution

TAB

Positive V_CE(sat)temperature coefficient

Low thermal resistance

TO-220

Soft and very fast recovery antiparallel diode

Maximum junction temperature: T_J= 175 °C

C(2, TAB)

Applications

•

Industrial drives

G(1)

UPS

Solar

Welding

E(3)

General-purpose inverters

NG1E3C2T

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where low-loss and

short-circuit functionality are essential. Furthermore, the positive V_CE(sat)temperature

coefficient and tight parameter distribution result in safer paralleling operation.

Product status link

STGP8M120DF3

Product summary

Order code

Marking

STGP8M120DF3

G8M120DF3

TO-220

Package

Packing

Tube

DS11847 - Rev 2 - April 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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