Datasheet > STGP4M65DF2

STGP4M65DF2

更新时间： 2023-12-20 18:44:30

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
16页	974K
描述
650 V、4 A沟槽栅场截止低损耗M系列IGBT

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STGP4M65DF2 数据手册

STGP4M65DF2

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

Datasheet - production data

Features



6 µs of short-circuit withstand time

V_CE(sat)= 1.6 V (typ.) @ I_C= 4 A

Tight parameter distribution

Safer paralleling

Low thermal resistance

Soft and very fast recovery antiparallel diode

TAB

Applications



TO-220

Motor control

UPS

PFC

Figure 1: Internal schematic diagram

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series

IGBTs, which represent an optimal balance

between inverter system performance and

efficiency where low-loss and short-circuit

functionality are essential. Furthermore, the

positive V_CE(sat)temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGP4M65DF2

G4M65DF2

TO-220

Tube

November 2016

DocID028671 Rev 3

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

中文翻译

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