Datasheet > STGP30H60DFB

STGP30H60DFB

更新时间： 2023-12-20 18:45:38

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STGP30H60DFB 数据手册

STGB30H60DFB, STGP30H60DFB

Datasheet

Trench gate field-stop 600 V, 30 A high speed HB series IGBT

Features

•

Maximum junction temperature: T_J= 175 °C

High speed switching series

TAB

Minimized tail current

Low saturation voltage: V_CE(sat)= 1.55 V (typ.) @ I_C= 30 A

Tight parameter distribution

D²PAK

TO-220

Safe paralleling

Positive V_CE(sat)temperature coefficient

Low thermal resistance

Very fast soft recovery antiparallel diode

Applications

•

Photovoltaic inverters

High frequency converters

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-

stop structure. These devices are part of the new HB series of IGBTs, which

represent an optimum compromise between conduction and switching loss to

maximize the efficiency of any frequency converter. Furthermore, the slightly positive

V_CE(sat)temperature coefficient and very tight parameter distribution result in safer

paralleling operation.

Product status link

STGB30H60DFB

STGP30H60DFB

DS10468 - Rev 3 - May 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

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