Datasheet > STGP30H60DF

STGP30H60DF

更新时间： 2024-11-21 14:57:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
14页	376K
描述
600 V、30 A高速沟槽栅场截止IGBT

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STGP30H60DF 数据手册

STGP30H60DF

Datasheet

Trench gate field-stop 600 V, 30 A high speed IGBT

Features

•

High speed switching

TAB

Tight parameters distribution

Safe paralleling

Low thermal resistance

Short circuit rated

TO-220

Ultrafast soft recovery antiparallel diode

Applications

•

Inverter

UPS

PFC

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. This IGBT series offers the optimum compromise between conduction

and switching losses, maximizing the efficiency of high frequency converters.

Furthermore, the positive V_CE(sat)temperature coefficient and the tight parameter

distribution result in safer paralleling operation.

Product status link

STGP30H60DF

Product summary

Order code

STGP30H60DF

GP30H60DF

TO-220

Marking

Package

Packing

Tube

DS8709 - Rev 4 - September 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...14

中文翻译

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