Datasheet > STGP30IH65DF

STGP30IH65DF

更新时间： 2023-12-20 18:45:24

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
15页	284K
描述
Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO-220 package

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STGP30IH65DF 数据手册

STGP30IH65DF

Datasheet

Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT

in a TO‑220 package

Features

•

Designed for soft commutation only

Maximum junction temperature: T_J= 175 °C

V_CE(sat)= 1.55 V (typ.) @ I_C= 30 A

Minimized tail current

TAB

Tight parameter distribution

TO-220

Low thermal resistance

Low drop voltage freewheeling co-packaged diode

Positive V_CE(sat)temperature coefficient

C(2, TAB)

Applications

G(1)

•

Induction heating

Resonant converters

Microwave ovens

E(3)

NG1E3C2T

Description

The newest IGBT 650 V soft-switching IH series has been developed using an

advanced proprietary trench gate field-stop structure, whose performance is

optimized both in conduction and switching losses for soft commutation. A

freewheeling diode with a low drop forward voltage is included. The result is a

product specifically designed to maximize efficiency for any resonant and soft-

switching applications.

Product status link

STGP30IH65DF

Product summary

Order code

Marking

STGP30IH65DF

G30IH65DF

TO-220

Package

Packing

Tube

DS13305 - Rev 1 - April 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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