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STGB10NC60HDT4 PDF预览

STGB10NC60HDT4

更新时间: 2024-11-23 06:14:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管
页数 文件大小 规格书
19页 771K
描述
600 V - 10 A - very fast IGBT

STGB10NC60HDT4 技术参数

生命周期:Active零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:10 weeks风险等级:2.18
最大集电极电流 (IC):20 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:5.75 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):60 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):247 ns标称接通时间 (ton):19 ns

STGB10NC60HDT4 数据手册

 浏览型号STGB10NC60HDT4的Datasheet PDF文件第2页浏览型号STGB10NC60HDT4的Datasheet PDF文件第3页浏览型号STGB10NC60HDT4的Datasheet PDF文件第4页浏览型号STGB10NC60HDT4的Datasheet PDF文件第5页浏览型号STGB10NC60HDT4的Datasheet PDF文件第6页浏览型号STGB10NC60HDT4的Datasheet PDF文件第7页 
STGB10NC60HD - STGD10NC60HD  
STGF10NC60HD - STGP10NC60HD  
600 V - 10 A - very fast IGBT  
Features  
2
Low on-voltage drop (V  
)
CE(sat)  
3
Low C  
/ C  
ratio (no cross-conduction  
IES  
3
1
RES  
1
susceptibility)  
PAK  
DPAK  
Very soft ultra fast recovery antiparallel diode  
Applications  
High frequency motor controls  
3
3
2
2
SMPS and PFC in both hard switch and  
1
1
resonant topologies  
TO-220FP  
TO-220  
Motor drivers  
Figure 1.  
Internal schematic diagram  
Description  
This IGBT utilizes the advanced PowerMESH™  
process resulting in an excellent trade-off  
between switching performance and low on-state  
behavior.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
Packaging  
STGB10NC60HDT4  
STGD10NC60HDT4  
STGF10NC60HD  
STGP10NC60HD  
GB10NC60HD  
GD10NC60HD  
GF10NC60HD  
GP10NC60HD  
Tape and reel  
DPAK  
TO-220FP  
TO-220  
Tube  
December 2008  
Rev 5  
1/19  
www.st.com  
19  

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