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STGB10NB37LZ PDF预览

STGB10NB37LZ

更新时间: 2024-02-09 04:15:45
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管双极性晶体管汽车点火PC
页数 文件大小 规格书
8页 95K
描述
N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT

STGB10NB37LZ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:D2PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.79Samacsys Confidence:3
Samacsys Status:ReleasedSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=180152
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=180152Samacsys PartID:180152
Samacsys Image:https://componentsearchengine.com/Images/9/STGB10NB37LZ.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/STGB10NB37LZ.jpg
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:TO-XXX (Inc. DPAK)Samacsys Footprint Name:D2PAK_STD_ST
Samacsys Released Date:2015-11-09 14:24:38Is Samacsys:N
其他特性:VOLTAGE CLAMPING外壳连接:COLLECTOR
最大集电极电流 (IC):20 A集电极-发射极最大电压:375 V
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR门极发射器阈值电压最大值:2.4 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:AUTOMOTIVE IGNITION晶体管元件材料:SILICON
标称断开时间 (toff):17800 ns标称接通时间 (ton):860 ns
Base Number Matches:1

STGB10NB37LZ 数据手册

 浏览型号STGB10NB37LZ的Datasheet PDF文件第2页浏览型号STGB10NB37LZ的Datasheet PDF文件第3页浏览型号STGB10NB37LZ的Datasheet PDF文件第4页浏览型号STGB10NB37LZ的Datasheet PDF文件第5页浏览型号STGB10NB37LZ的Datasheet PDF文件第6页浏览型号STGB10NB37LZ的Datasheet PDF文件第7页 
STGB10NB37LZ  
2
N-CHANNEL CLAMPED 10A D PAK  
INTERNALLY CLAMPED PowerMESH IGBT  
TYPE  
VCES  
VCE(sat)  
IC  
STGB10NB37LZ CLAMPED < 1.8 V  
10 A  
POLYSILICONGATE VOLTAGE DRIVEN  
LOW THRESHOLD VOLTAGE  
LOW ON-VOLTAGEDROP  
HIGH CURRENT CAPABILITY  
HIGH VOLTAGE CLAMPING FEATURE  
SURFACE-MOUNTING D2PAK (TO-263)  
POWER PACKAGE IN TUBE (NO SUFFIX)  
OR IN TAPE & REEL (SUFFIX ”T4”)  
3
1
D2PAK  
TO-263  
DESCRIPTION  
Using the latest high voltage technology based  
on patented strip layout, SGS-Thomson has  
designed an advanced family of IGBTs with  
outstandingperformances.  
The built in collector-gate zener exhibits a very  
precise active clamping while the gate-emitter  
zener supplies an ESD protection.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
AUTOMOTIVE IGNITION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VECR  
VGE  
Parameter  
Value  
Unit  
Collector-Emitter Voltage (VGS = 0)  
Reverse Battery Protection  
Gate-Emitter Voltage  
CLAMPED  
V
V
18  
CLAMPED  
V
o
IC  
Collector Current (continuous) at Tc = 25 C  
20  
20  
A
o
IC  
Collector Current (continuous) at Tc = 100 C  
A
I
CM()  
Collector Current (pulsed)  
60  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
125  
W
Derating Factor  
0.83  
4
W/oC  
KV  
oC  
oC  
ESD  
Tstg  
Tj  
ESD (Human Body Model)  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/8  
June 1999  

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