是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | D2PAK |
包装说明: | ROHS COMPLIANT, TO-263, DPAK-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.23 | Is Samacsys: | N |
最大集电极电流 (IC): | 29 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 门极发射器阈值电压最大值: | 5 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 245 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 80 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 3100 ns |
标称接通时间 (ton): | 1160 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGB10NC60HD | STMICROELECTRONICS |
获取价格 |
N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT | |
STGB10NC60HD_0710 | STMICROELECTRONICS |
获取价格 |
N-channel 600V - 10A - TO-220 - D2PAK - TO-220FP very fast PowerMESH IGBT | |
STGB10NC60HD_08 | STMICROELECTRONICS |
获取价格 |
600 V - 10 A - very fast IGBT | |
STGB10NC60HDT4 | STMICROELECTRONICS |
获取价格 |
600 V - 10 A - very fast IGBT | |
STGB10NC60HDTRL | STMICROELECTRONICS |
获取价格 |
20A, 600V, N-CHANNEL IGBT, ROHS COMPLIANT, D2PAK-3 | |
STGB10NC60K | STMICROELECTRONICS |
获取价格 |
N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH TM IGBT | |
STGB10NC60K_07 | STMICROELECTRONICS |
获取价格 |
N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH TM IGBT | |
STGB10NC60KD | STMICROELECTRONICS |
获取价格 |
N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT | |
STGB10NC60KD_09 | STMICROELECTRONICS |
获取价格 |
10 A, 600 V short-circuit rugged IGBT | |
STGB10NC60KDT4 | STMICROELECTRONICS |
获取价格 |
N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT |