Datasheet > STGB10NC60HD_0710

STGB10NC60HD_0710

更新时间： 2024-11-19 04:01:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
17页	411K
描述
N-channel 600V - 10A - TO-220 - D2PAK - TO-220FP very fast PowerMESH IGBT

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中文翻译

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数据手册

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STGB10NC60HD_0710 数据手册

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STGB10NC60HD - STGF10NC60HD

STGP10NC60HD

N-channel 600V - 10A - TO-220 - D²PAK - TO-220FP

very fast PowerMESH™ IGBT

Features

V_CE(sat)

(Max)@ 25°C @100°C

I_C

V_CES

Type

STGB10NC60HD 600V

STGP10NC60HD 600V

STGF10NC60HD 600V

< 2.5V

10A

D²PAK

TO-220

■ Low on-voltage drop (V

)

TO-220FP

cesat

■ Low C

/ C

ratio (no cross-conduction

IES

RES

susceptibility)

■ Very soft ultra fast recovery antiparallel diode

Applications

■ High frequency motor controls

Figure 1. Internal schematic diagram

■ Smps and pfc in both hard switch and resonant

topologies

■ Motor drivers

Description

Using the latest high voltage technology based on

a patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the

™

PowerMESH IGBTs, with outstanding

performances. The suffix “H” identifies a family

optimized for high frequency applications in order

to achieve very high switching performances

(reduced tfall) manta in ing a low voltage drop.

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STGB10NC60HD

STGP10NC60HD

STGF10NC60HD

GB10NC60HD

GP10NC60HD

GF10NC60HD

D²PAK

TO-220

Tape & reel

Tube

TO-220FP

Tube

October 2007

Rev 4

1/17

www.st.com

12 3 4 5 6 7...17

中文翻译

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