Datasheet > STD80N10F7

STD80N10F7

更新时间： 2023-12-20 18:44:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
25页	1361K
描述
N沟道100 V、0.0085 Ohm典型值、70 A STripFET F7功率MOSFET，DPAK封装

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数据手册

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STD80N10F7 数据手册

STD80N10F7, STF80N10F7,

STH80N10F7-2, STP80N10F7

N-channel 100 V, 0.008 Ω typ., 80 A STripFET™ VII DeepGATE™

Power MOSFETs in DPAK, TO-220FP, H²PAK-2 and TO-220

Datasheet

production data

Features

TAB

V_DS

T_Jmax

R_DS(on)

max

Order codes

I_D

P_TOT

DPAK

STD80N10F7

STF80N10F7

STH80N10F7-2

STP80N10F7

0.01 Ω

70 A

40 A

85 W

30 W

TO-220FP

100 V

TAB

0.0095 Ω

0.01 Ω

TAB

80 A

110 W

• Extremely low gate charge

• Ultra low on-resistance

• Low gate input resistance

H²PAK-2

TO-220

Applications

Figure 1. Internal schematic diagram

• Switching applications

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Description

These devices utilize the 7^thgeneration of design

rules of ST’s proprietary STripFET™ technology,

with a new gate structure. The resulting Power

MOSFET exhibits the lowest R_DS(on)in all

packages.

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Table 1. Device summary

Order codes

Marking

Package

Packaging

STD80N10F7

STF80N10F7

STH80N10F7-2

STP80N10F7

DPAK

TO-220FP

H²PAK-2

TO-220

Tape and reel

Tube

80N10F7

Tape and reel

Tube

February 2014

DocID025865 Rev 1

1/25

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...25

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