Datasheet > STD83003

STD83003

更新时间： 2024-11-23 22:19:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
8页	301K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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中文翻译

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数据手册

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STD83003 数据手册

STD83003

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

■

REVERSE PINS OUT Vs STANDARD IPAK

(TO-251) / DPAK (TO-252) PACKAGES

MEDIUM VOLTAGE CAPABILITY

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■

VERY HIGH SWITCHING SPEED

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL (Suffix

"T4")

■

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (Suffix "-1")

IPAK

TO-251

(Suffix "-1")

DPAK

TO-252

(Suffix "T4")

APPLICATIONS:

■

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

■

SWITCH MODE POWER SUPPLIES

DESCRIPTION

INTERNAL SCHEMATIC DIAGRAM

The device is manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The STD83003 is expressly designed for a new

solution to be used in compact fluorescent lamps,

where it is coupled with the STD93003, its

complementary PNP transistor.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

Parameter

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

Value

700

Unit

V_CEO

400

V_EBO

Emitter-Base Voltage

V_(BR)EBO

(I_C= 0, I_B= 0.75 A, t_p< 10µs, T_j< 150^oC)

Collector Current

I_C

I_CM

I_B

1.5

Collector Peak Current (t_p< 5 ms)

Base Current

0.75

1.5

I_BM

P_tot

T_stg

T_j

Base Peak Current (t_p< 5 ms)

Total Dissipation at T_c= 25 C

^oC

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/8

October 2002

12 3 4 5 6 7 8

中文翻译

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