Datasheet > STD80N6F7

STD80N6F7

更新时间： 2023-12-20 18:45:38

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	275K
描述
N沟道60 V、6.8 mOhm典型值、40 A STripFET F7功率MOSFET，DPAK封装

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STD80N6F7 数据手册

STD80N6F7

Datasheet

N-channel 60 V, 6.8 mΩ typ., 40 A STripFET™ F7 Power MOSFET in a DPAK

package

Features

Order code

max.

DS(on )

TAB

STD80N6F7

60 V

8.0 mΩ

40 A

•

Among the lowest R_DS(on)on the market

Excellent FoM (figure of merit)

DPAK

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

D(2, TAB)

Applications

G(1)

•

Switching applications

S(3)

AM01475v1_noZen

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an

enhanced trench gate structure that results in very low on-state resistance, while also

reducing internal capacitance and gate charge for faster and more efficient switching.

Product status

STD80N6F7

Product summary

Order code

STD80N6F7

80N6F7

Marking

Package

Packing

DPAK

Tape and reel

DS11885 - Rev 5 - February 2018

For further information contact your local STMicroelectronics sales office.

www.st.com/

12 3 4 5 6 7...14

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