Datasheet > STD80N6F6

STD80N6F6

更新时间： 2023-12-20 18:45:29

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	789K
描述
汽车级N沟道60 V、4.4 mOhm典型值、80 A STripFET(TM) VI DeepGATE(TM) 功率MOSFET，DPAK封装

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STD80N6F6 数据手册

STD80N6F6

Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A

STripFET™ F6 Power MOSFET in a DPAK package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

STD80N6F6

60 V

5 mΩ

80 A



AEC-Q101 qualified

Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

Figure 1: Internal schematic diagram

Applications



Switching applications

D(2, TAB)

Description

This device is an N-channel Power MOSFET

developed using the STripFET™ F6 technology

with a new trench gate structure. The resulting

Power MOSFET exhibits very low R_DS(on)in all

packages.

G(1)

S(3)

AM01475v1_noZen

Table 1: Device summary

Marking Package

80N6F6 DPAK

Order code

Packaging

STD80N6F6

Tape and reel

May 2017

DocID023471 Rev 3

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

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