Datasheet > STD80N340K6

STD80N340K6

更新时间： 2024-11-25 14:58:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	527K
描述
N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET in a DPAK package

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STD80N340K6 数据手册

STD80N340K6

Datasheet

N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power MOSFET

in a DPAK package

Features

TAB

DS(on)

max.

Order code

STD80N340K6

800 V

340 mΩ

12 A

•

Worldwide best R_DS(on)x area

Worldwide best FOM (figure of merit)

Ultra low gate charge

DPAK

D(2, TAB)

100% avalanche tested

Zener-protected

G(1)

Applications

•

Flyback converter

Adapters for tablets, notebook and AIO

LED lighting

S(3)

AM01476v1_tab

Description

This very high voltage N-channel Power MOSFET is designed using the ultimate

MDmesh K6 technology based on 20 years STMicroelectronics experience on super

junction technology. The result is the best-in-class on-resistance per area and gate

charge for applications requiring superior power density and high efficiency.

Product status link

STD80N340K6

Product summary

Order code

STD80N340K6

Marking

Package

Packing

80N340K6

DPAK

Tape and reel

DS14092 - Rev 2 - May 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...18

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