Datasheet > STD80N4F6

STD80N4F6

更新时间： 2024-11-25 14:57:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	1123K
描述
汽车级N沟道40 V、5.5 mOhm典型值、80 A STripFET F6功率MOSFET，DPAK封装

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STD80N4F6 数据手册

STD80N4F6

Automotive-grade N-channel 40 V, 5.5 mΩ typ., 80 A

STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package

Datasheet

−

production data

Features

Order code

V_DS

40 V

R_DS(on)max

I_D

TAB

STD80N4F6

6 mΩ

80 A

• Designed for automotive applications and

AEC-Q101 qualified

DPAK

• Low gate charge

• Very low on-resistance

• High avalanche ruggedness

Figure 1. Internal schematic diagram

Applications

• Switching applications

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Description

This device is an N-channel Power MOSFET

developed using the 6^thgeneration of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest R_DS(on)in all packages.

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Table 1. Device summary

Order code

Marking

80N4F6

Package

Packaging

STD80N4F6

DPAK

Tape and reel

March 2014

DocID026016 Rev 1

1/16

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...16

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