Datasheet > STD802S

STD802S

更新时间： 2024-11-24 15:53:07

品牌	Logo	应用领域
三合微科 - SAMHOP		/
页数	文件大小	规格书
8页	123K
描述
Transistor

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STD802S 数据手册

Green

Product

STU/D802S

S mHop Microelectronics Corp.

Ver 1.0

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES

PRODUCT SUMMARY

Super high dense cell design for low RDS(ON)

RDS(ON) (mΩ) Max

VDSS

Rugged and reliable.

35 @ VGS=10V

50 @ VGS=4.5V

25A

TO-252 and TO-251 Package.

80V

STU SERIES

TO-252AA(D-PAK)

STD SERIES

TO-251(l-PAK)

)

(

ABSOLUTE MAXIMUM RATINGS T_C=25 C unless otherwise noted

Symbol

V_DS

Parameter

Drain-Source Voltage

Units

Limit

V_GS

I_D

Gate-Source Voltage

100

196

62.5

Drain Current-Continuous^a

TA=25 C

I_DM

E_AS

P_D

-Pulsed

Avalanche Energy ^c

Maximum Power Dissipation ^a

TA=25 C

Operating Junction and Storage

Temperature Range

°C

T_J, T_STG

-55 to 150

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

°C/W

Mar,31,2010

www.samhop.com.tw

12 3 4 5 6 7 8

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