生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | 35 X 35 MM, PLASTIC, BGA PACKAGE | Reach Compliance Code: | compliant |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.84 |
Is Samacsys: | N | JESD-30 代码: | S-PBGA-B |
功能数量: | 1 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装形状: | SQUARE |
封装形式: | GRID ARRAY | 认证状态: | Not Qualified |
表面贴装: | YES | 电信集成电路类型: | TELECOM CIRCUIT |
端子形式: | BALL | 端子位置: | BOTTOM |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STD802S | SAMHOP |
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Transistor | |
STD80N10F7 | STMICROELECTRONICS |
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N沟道100 V、0.0085 Ohm典型值、70 A STripFET F7功率MOSF | |
STD80N240K6 | STMICROELECTRONICS |
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N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package | |
STD80N340K6 | STMICROELECTRONICS |
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N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET in a DPAK package | |
STD80N3LL | STMICROELECTRONICS |
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N沟道30 V、2 mOhm典型值、120 A STripFET H6功率MOSFET,D | |
STD80N450K6 | STMICROELECTRONICS |
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N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a DPAK package | |
STD80N4F6 | STMICROELECTRONICS |
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汽车级N沟道40 V、5.5 mOhm典型值、80 A STripFET F6功率MOSF | |
STD80N6F6 | STMICROELECTRONICS |
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汽车级N沟道60 V、4.4 mOhm典型值、80 A STripFET(TM) VI D | |
STD80N6F7 | STMICROELECTRONICS |
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N沟道60 V、6.8 mOhm典型值、40 A STripFET F7功率MOSFET, | |
STD815CP40 | STMICROELECTRONICS |
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Complementary transistor pair in a single package |