Datasheet > SSM6680GM

SSM6680GM

更新时间： 2024-11-13 06:14:15

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描述
N-channel Enhancement-mode Power MOSFET

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SSM6680GM 数据手册

SSM6680GM

N-channel Enhancement-mode Power MOSFET

PRODUCT SUMMARY

DESCRIPTION

The SSM6680GM acheives fast switching performance

with low gate charge without a complex drive circuit. It

is suitable for low voltage applications such as DC/DC

converters and general load-switching circuits.

BV_DSS

R_DS(ON)

I_D

30V

11mW

11.5A

The SSM6680M is supplied in an RoHS-compliant

SO-8 package, which is widely used for medium power

commercial and industrial surface mount applications.

Pb-free; RoHS-compliant SO-8

SO-8

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

Units

Drain-source voltage

Gate-source voltage

V_GS

±25

11.5

9.5

Continuous drain current, T = 25°C

I_D

T = 70°C

I_DM

P_D

Pulsed drain current¹

Total power dissipation, T = 25°C

2.5

Linear derating factor

0.02

W/°C

-55 to 150

°C

T_STG

T_J

Storage temperature range

Operating junction temperature range

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Units

Maximum thermal resistance, junction-ambient³

°C/W

ΘJA

Notes:

1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.

2.Pulse width <300us, duty cycle <2%.

3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.

12/16/2005 Rev.3.01

www.SiliconStandard.com

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