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SSM6680GM PDF预览

SSM6680GM

更新时间: 2024-11-13 06:14:15
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描述
N-channel Enhancement-mode Power MOSFET

SSM6680GM 数据手册

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SSM6680GM  
N-channel Enhancement-mode Power MOSFET  
PRODUCT SUMMARY  
DESCRIPTION  
The SSM6680GM acheives fast switching performance  
with low gate charge without a complex drive circuit. It  
is suitable for low voltage applications such as DC/DC  
converters and general load-switching circuits.  
BVDSS  
RDS(ON)  
ID  
30V  
11mW  
11.5A  
The SSM6680M is supplied in an RoHS-compliant  
SO-8 package, which is widely used for medium power  
commercial and industrial surface mount applications.  
Pb-free; RoHS-compliant SO-8  
D
D
D
D
G
S
S
S
SO-8  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
30  
Units  
Drain-source voltage  
Gate-source voltage  
V
V
VGS  
±25  
11.5  
9.5  
Continuous drain current, T = 25°C  
ID  
A
C
T = 70°C  
A
C
IDM  
PD  
Pulsed drain current1  
50  
A
Total power dissipation, T = 25°C  
2.5  
W
C
Linear derating factor  
0.02  
W/°C  
-55 to 150  
-55 to 150  
°C  
°C  
TSTG  
TJ  
Storage temperature range  
Operating junction temperature range  
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Value  
50  
Units  
Maximum thermal resistance, junction-ambient3  
°C/W  
R
ΘJA  
Notes:  
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.  
2.Pulse width <300us, duty cycle <2%.  
3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.  
12/16/2005 Rev.3.01  
www.SiliconStandard.com  
1 of 7  

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