Datasheet > SSF1004U

SSF1004U

更新时间： 2024-09-16 17:38:51

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
7页	1124K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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SSF1004U 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

SSF1004U 数据手册

SSF1004U

100V N-Channel MOSFET

Main Product Characteristics

V_DSS

R_DS(ON)

I_D

100V

4mΩ (typ.)

130A¹

TO-220

SchematicDiagram

Features and Benefits



AdvancedMOSFETprocesstechnology

Ideal for PWM, load switching and

generalpurposeapplications



Ultralowon-resistancewithlowgatecharge

Fastswitchingandreversebodyrecovery

150°C operatingtemperature

Description

The SSF1004U utilizes the latest techniques to achieve high cell density and low on-resistance.

These features make this device extremely efficient and reliable for use in high efficiency switch

mode power supply and a wide variety of other applications.

Absolute Maximum Ratings

Parameter

Symbol

Max.

Unit

Continuous Drain Current, VGS @ 10V¹

I^D@ TC = 25°C

130

Pulsed Drain Current²

I^DM

P^D@TC = 25°C

V^DS

390

192

Power Dissipation³

Drain-Source Voltage

100

Gate-to-Source Voltage

V^GS

± 20

Single Pulse Avalanche Energy @ L=0.5mH

Operating Junction and Storage Temperature Range

E^AS

400

°C

TJ TSTG

-55 to +150

Thermal Characteristics

Parameter

Junction-to-Case³

Symbol

R^θJC

Value

0.62

Unit

°C/W

Junction-to-Ambient⁴

R^θJA

1/7

12 3 4 5 6 7

中文翻译

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