Datasheet > SSF1016

SSF1016

更新时间： 2024-09-16 06:14:19

品牌	Logo	应用领域
新硅能 - SILIKRON		开关电源开关
页数	文件大小	规格书
5页	334K
描述
Power switching application

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SSF1016 数据手册

SSF1016

Feathers:

ID =75A

Advanced trench process technology

BV=100V

avalanche energy, 100% test

Rdson=16mΩ(Max.）

Fully characterized avalanche voltage and current

Description:

The SSF1016 is a new generation of high voltage and low

current N–Channel enhancement mode trench power

MOSFET. This new technology increases the device reliability

and electrical parameter repeatability. SSF1016 is assembled

in high reliability and qualified assembly house.

Application:

SSF1016 TOP View (T0-220)

Power switching application

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@T_c=25 ْC

I_D@T_c=100ْC

I_DM

Continuous drain current,VGS@10V

Pulsed drain current

Power dissipation

①

300

227

1.5

W/ Cْ

P_D@T_C=25ْC

Linear derating factor

Gate-to-Source voltage

V_GS

±20

380

TBD

E_AS

Single pulse avalanche energy

Repetitive avalanche energy

Peak diode recovery voltage

Operating Junction and

②

E_AR

dv/dt

v/ns

T_J

–55 to +150

Cْ

T_STG

Storage Temperature Range

Thermal Resistance

Parameter

Min.

—

Typ.

0.55

—

Max.

—

Units

R_θJC

R_θJA

Junction-to-case

Junction-to-ambient

Cْ /W

—

Electrical Characteristics @TJ=25 Cْ (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV_DSSDrain-to-Source breakdown voltage 100

Test Conditions

V_GS=0V,I_D=250μA

mΩ V_GS=10V,I_D=30A

—

4.0

R_DS(on)Static Drain-to-Source on-resistance

—

2.0

—

V_GS(th)

Gate threshold voltage

V_DS=V_GS,I_D=250μA

V_DS=100V,V_GS=0V

V_DS=100V,

I_DSS

Drain-to-Source leakage current

μA

—

V_GS=0V,T_J=150Cْ

V_GS=20V

Gate-to-Source forward leakage

Gate-to-Source reverse leakage

—

100

I_GSS

-100

V_GS=-20V

©Silikron Semiconductor CO.,LTD.

2009.8.10

Version : 1.0

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