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SSF1020 PDF预览

SSF1020

更新时间: 2024-11-06 06:14:19
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页数 文件大小 规格书
5页 330K
描述
Power switching application

SSF1020 数据手册

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SSF1020  
Feathers:  
ID =60A  
„
„
„
„
Advanced trench process technology  
BV=100V  
Ultra low Rdson, typical 16mohm  
Rdson=20mmax.)  
High avalanche energy, 100% test  
Fully characterized avalanche voltage and current  
Description:  
The SSF1020 is a new generation of middle voltage and high  
current N–Channel enhancement mode trench power  
MOSFET. This new technology increases the device reliability  
and electrical parameter repeatability. SSF1020 is assembled  
in high reliability and qualified assembly house.  
Application:  
SSF1020 TOP View (TO220)  
„
Power switching application  
Absolute Maximum Ratings  
Parameter  
Max.  
60  
Units  
ID@Tc=25 ْC Continuous drain current,VGS@10V  
ID@Tc=100ْC Continuous drain current,VGS@10V  
50  
A
IDM  
Pulsed drain current  
240  
150  
2.0  
PD@TC=25ْC Power dissipation  
W
W/ Cْ  
V
Linear derating factor  
VGS  
EAS  
EAR  
TJ  
Gate-to-Source voltage  
±20  
240  
TBD  
Single pulse avalanche energy  
Repetitive avalanche energy  
Operating Junction and  
mJ  
–55 to +150  
Cْ  
TSTG  
Storage Temperature Range  
Thermal Resistance  
Parameter  
Junction-to-case  
Junction-to-ambient  
Min.  
Typ.  
0.83  
Max.  
Units  
RθJC  
RθJA  
Cْ /W  
62  
Electrical Characteristics @TJ=25 Cْ (unless otherwise specified)  
Parameter  
Min. Typ.  
Max. Units  
Test Conditions  
VGS=0V,ID=250μA  
VGS=10V,ID=30A  
VDS=VGS,ID=250μA  
VDS=5V,ID=30A  
VDS=100V,VGS=0V  
VDS=100V,  
BVDSS  
RDS(on)  
VGS(th)  
gfs  
Drain-to-Source breakdown voltage  
Static Drain-to-Source on-resistance  
Gate threshold voltage  
100  
2.0  
-
16  
3.0  
58  
20  
4.0  
1
V
mΩ  
V
Forward transconductance  
S
IDSS  
Drain-to-Source leakage current  
μA  
10  
VGS=0V,TJ=150ْC  
VGS=20V  
IGSS  
Gate-to-Source forward leakage  
100  
nA  
©Silikron Semiconductor CO.,LTD  
2009.12.13  
Version : 1.0  
page  
1of5  

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