Datasheet > SSF1020_15

SSF1020_15

更新时间： 2024-09-17 01:25:51

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
5页	1055K
描述
100V N-Channel MOSFET

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SSF1020_15 数据手册

SSF1020

100V N-Channel MOSFET

FEATURES

ID =60A



Advanced trench process technology

BV=100V

Ultra low Rdson, typical 16mohm

High avalanche energy, 100% test

Fully characterized avalanche voltage and current

Lead free product

R_DS(ON)=16mΩ（Typ.）

DESCRIPTION

The SSF1020 is a new generation of middle voltage and high

current N–Channel enhancement mode trench power

MOSFET. This new technology increases the device reliability

and electrical parameter repeatability. SSF1020 is assembled

in high reliability and qualified assembly house.

APPLICATIONS



Power switching application

SSF1020 Top View (TO-220)

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@T_c=25ْC Continuous drain current,VGS@10V

I_D@T_c=100Cْ Continuous drain current,VGS@10V

I_DM

Pulsed drain current ①

Power dissipation

240

180

2.0

W/ْC

P_D@T_C=25ْC

Linear derating factor

V_GS

E_AS

E_AR

T_J

Gate-to-Source voltage

Single pulse avalanche energy ②

Repetitive avalanche energy

Operating Junction and

Storage Temperature Range

±20

240

TBD

–55 to +175

Cْ

T_STG

Thermal Resistance

Parameter

Junction-to-case

Junction-to-ambient

Min.

—

Typ.

0.83

—

Max.

—

Units

R_θJC

R_θJA

Cْ /W

—

Electrical Characteristics @T_J=25 Cْ (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Test Conditions

V_GS=0V,I_D=250μA

BV_DSS

R_DS(on)

V_GS(th)

g_fs

Drain-to-Source breakdown voltage

Static Drain-to-Source on-resistance

Gate threshold voltage

100

—

3.0

—

4.0

—

mΩ

V_GS=10V,I_D=30A

2.0

—

V_DS=V_GS,I_D=250μA

V_DS=5V,I_D=30A

Forward transconductance

—

V_DS=100V,V_GS=0V

V_DS=100V, V_GS=0V, T_J=150ْC

I_DSS

Drain-to-Source leakage current

μA

—

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Rev.2.2

12 3 4 5

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