Datasheet > SSF1020D

SSF1020D

更新时间： 2024-11-10 01:22:31

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
7页	1089K
描述
100V N-Channel MOSFET

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中文翻译

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SSF1020D 数据手册

SSF1020D

100V N-Channel MOSFET

Main Product Characteristics

V_DSS

R_DS(on)

I_D

100V

16mΩ(typ.)

60A

MarkingandPin

Assignment

DPAK

SchematicDiagram

Features and Benefits



AdvancedtrenchMOSFETprocess technology

Special designed for PWM, load switching and

generalpurposeapplications



Ultralowon-resistancewithlowgatecharge

Fastswitching andreversebodyrecovery

175℃operating temperature

Leadfreeproduct

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the

on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely

efficient andreliable devicefor useinpower switching application and awidevarietyof other applications.

Absolute Max Rating

Symbol

Parameter

Max.

Units

I_D@ TC = 25°C

I_D@ TC = 100°C

I_DM

Continuous Drain Current, V_GS@ 10V①

Pulsed Drain Current②

240

Power Dissipation③

143

W/°C

P_D@TC = 25°C

Linear Derating Factor

2.0

V_DS

Drain-Source Voltage

100

V_GS

Gate-to-Source Voltage

± 20

240

E_AS

Single Pulse Avalanche Energy @ L=0.3mH

Avalanche Current @ L=0.3mH

Operating Junction and Storage Temperature Range

I_AS

T_JT_STG

-55 to + 175

°C

www.goodark.com

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Rev.2.2

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