Datasheet > SSF1016A_15

SSF1016A_15

更新时间： 2024-09-17 01:17:51

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
7页	1199K
描述
100V N-Channel MOSFET

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SSF1016A_15 数据手册

SSF1016A

100V N-Channel MOSFET

Main Product Characteristics

V_DSS100V

R_DS(on) 13.8mohm(typ.)

I_D75A

①

MarkingandPin

SchematicDiagram

Assignment

D2PAK

Features and Benefits



AdvancedtrenchMOSFETprocess technology

Special designed for PWM, load switching and

generalpurposeapplications



Ultralowon-resistancewithlowgatecharge

Fastswitching andreversebodyrecovery

175℃operating temperature

Leadfreeproduct

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the

on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely

efficient andreliable devicefor useinpower switching application and awidevarietyof other applications.

Absolute Max Rating

Symbol

Parameter

Max.

Units

I_D@ TC = 25°C

I_D@ TC = 100°C

I_DM

Continuous Drain Current, V_GS@ 10V ①

Pulsed Drain Current ②

300

Power Dissipation ③

273

W/°C

P_D@TC = 25°C

Linear Derating Factor

1.8

V_DS

Drain-Source Voltage

100

V_GS

Gate-to-Source Voltage

± 20

153

E_AS

Single Pulse Avalanche Energy @ L=0.3mH

Avalanche Current @ L=0.3mH

Operating Junction and Storage Temperature Range

I_AS

T_JT_STG

-55 to + 175

°C

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Rev.1.0

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