Datasheet > SSF1007_15

SSF1007_15

更新时间： 2024-09-17 01:25:51

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
5页	1064K
描述
100V N-Channel MOSFET

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SSF1007_15 数据手册

SSF1007

100V N-Channel MOSFET

Main Product Characteristics

V_DSS

R_DS(on)

I_D

100V（Typ）

6mohm（Typ）

130A

Features and Benefits

SSF1007 Top View (TO-220)



AdvancedtrenchMOSFETprocess technology

Specialdesignedfor convertors andpower controls

Ultralowon-resistance

150℃operating temperature

HighAvalanchecapabilityand100% tested

Leadfreeproduct

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the

on-resistance with high repetitive avalanche rating. These features combine to make this design an

extremely efficient and reliable device for use in power switching application and a wide variety of other

applications.

Absolute Max Rating

Symbol

Parameter

Max.

130

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V①

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V①

IDM

ISM

Pulsed Drain Current②

520

Pulsed Source Current.(Body Diode)

Power Dissipation③

258

1.7

W/ Cْ

PD @TC = 25°C

Linear derating factor

± 20

735

VDS

VGS

dv/dt

EAS

IAR

Drain-Source Voltage

Gate-to-Source Voltage

Peak diode recovery voltage

Single Pulse Avalanche Energy @ L=0.3mH②

Avalanche Current @ L=0.3mH②

Operating Junction and Storage Temperature

Range

-55 to + 175

130

v/ns

TJ TSTG

520

°C

Thermal Resistance

Symbol

R_θJC

Characteristics

Value

0.58

Unit

℃/W

Junction-to-case③

R_θJA

Junction-to-ambient (t ≤ 10s) ④

www.goodark.com

Page 1 of 5

Rev.1.0

12 3 4 5

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