Datasheet > SSF1006A_15

SSF1006A_15

更新时间： 2024-09-17 01:17:51

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
6页	1185K
描述
100V N-Channel MOSFET

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SSF1006A_15 数据手册

SSF1006A

100V N-Channel MOSFET

FEATURES

ID =200A

BV=100V



Advanced trench process technology

avalanche energy, 100% test

R_DS(ON)=4.7mΩ（Typ.）

Fully characterized avalanche voltage and current

Lead free product

DESCRIPTION

The SSF1006A is a new generation of high voltage and low

current N–Channel enhancement mode trench power

MOSFET. This new technology increases the device reliability

and electrical parameter repeatability. SSF1006A is

assembled in high reliability and qualified assembly house.

APPLICATIONS



Power switching application

SSF1006A Top View (D2PAK)

Absolute Maximum Ratings

Parameter

Max.

200

130

800

272

1.5

Units

I_D@T_c=25ْC

I_D@T_c=100Cْ

I_DM

Continuous drain current,VGS@10V

Pulsed drain current

Power dissipation

①

W/ْC

P_D@T_C=25ْC

Linear derating factor

Gate-to-Source voltage

V_GS

E_AS

E_AR

dv/dt

T_J

±20

960

TBD

Single pulse avalanche energy

Repetitive avalanche energy

Peak diode recovery voltage

Operating Junction and

②

v/ns

–55 to +150

Cْ

T_STG

Storage Temperature Range

Thermal Resistance

Parameter

Min.

—

Typ.

0.46

—

Max.

—

Units

Cْ /W

R_θJC

R_θJA

Junction-to-case

Junction-to-ambient

—

Electrical Characteristics @T_J=25 Cْ (unless otherwise specified)

Parameter

Min. Typ.

Max. Units

Test Conditions

V_GS=0V,I_D=250μA

V_GS=10V,I_D=30A

V_DS=V_GS,I_D=250μA

V_DS=100V,V_GS=0V

BV_DSSDrain-to-Source breakdown voltage

R_DS(on)Static Drain-to-Source on-resistance

V_GS(th)Gate threshold voltage

100

—

4.7

—

5.5

4.0

mΩ

2.0

—

I_DSSDrain-to-Source leakage current

—

μA

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Page 1 of 6

Rev.1.0

12 3 4 5 6

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