Datasheet > SQ3456BEV

SQ3456BEV

更新时间： 2024-11-16 11:57:35

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威世 - VISHAY		/
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描述
Automotive N-Channel 30 V (D-S) 175 Â°C MOSFET

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SQ3456BEV 数据手册

SQ3456BEV

Vishay Siliconix

Automotive N-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET^®Power MOSFET

• Compliant to RoHS Directive 2002/95/EC

• AEC-Q101 Qualified^c

PRODUCT SUMMARY

V_DS(V)

_DS(on)() at V_GS= 10 V

_DS(on)() at V_GS= 4.5 V

0.035

0.052

7.8

_D(A)

Configuration

Single

TSOP-6

Top View

(1, 2, 5, 6) D

3 mm

(3) G

2.85 mm

Marking Code: 8Lxxx

(4) S

N-Channel MOSFET

ORDERING INFORMATION

Package

TSOP-6

Lead (Pb)-free and Halogen-free

SQ3456BEV-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

7.8

I_D

Continuous Drain Current

T_C= 125 °C

4.5

I_S

Continuous Source Current (Diode Conduction)

Pulsed Drain Current^a

I_DM

I_AS

E_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

1.3

Maximum Power Dissipation^a

P_D

T_C= 125 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

110

UNIT

PCB Mount^b

Junction-to-Ambient

°C/W

R_thJF

Junction-to-Foot (Drain)

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR-4 material).

c. Parametric verification ongoing.

Document Number: 67934

S11-0959-Rev. A, 06-Jun-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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