Datasheet > SQ3481EV

SQ3481EV

更新时间： 2024-09-29 14:55:27

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描述
Automotive P-Channel 30 V (D-S) 175 °C MOSFET

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SQ3481EV 数据手册

SQ3481EV

Vishay Siliconix

www.vishay.com

Automotive P-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

TSOP-6 Single

• TrenchFET^®Power MOSFET

• AEC-Q101 Qualified^c

• 100 % R_gand UIS Tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

(4) S

Top View

(3) G

PRODUCT SUMMARY

V_DS(V)

- 30

0.043

0.070

- 7.5

R_DS(on)(Ω) at V_GS= - 10 V

R_DS(on)(Ω) at V_GS= - 4.5 V

I_D(A)

(1, 2, 5, 6) D

P-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

TSOP-6

SQ3481EV

Lead (Pb)-free and halogen-free

(for detailed order number please see www.vishay.com/doc?79771)

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

- 30

Gate-Source Voltage

V_GS

- 7.5

- 4.3

- 5.2

- 30

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 125 °C

Continuous Source Current

Pulsed Drain Current^a

I_S

I_DM

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

- 15

L = 0.1 mH

T_C= 25 °C

E_AS

Maximum Power Dissipation^a

P_D

_C= 125 °C

1.3

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

110

UNIT

Junction-to-Ambient

PCB Mount^b

°C/W

Junction-to-Foot (Drain)

R_thJF

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %

b. When mounted on 1" square PCB (FR-4 material)

c. Parametric verification ongoing

S21-1246-Rev. C, 10-Jan-2022

Document Number: 71508

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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