Datasheet > SQ4284EY

SQ4284EY

更新时间： 2024-11-17 14:55:31

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威世 - VISHAY		/
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描述
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET

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SQ4284EY 数据手册

SQ4284EY

Vishay Siliconix

www.vishay.com

Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®Power MOSFET

SO-8 Dual

D₂

• AEC-Q101 qualified

D₁

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

G₂

S₂

G₁

S₁

Top View

PRODUCT SUMMARY

V_DS(V)

R_DS(on)(Ω) at V_GS= 10 V

R_DS(on)(Ω) at V_GS= 4.5 V

I_D(A)

0.0135

0.0148

N-Channel MOSFET

Configuration

Dual

ORDERING INFORMATION

Package

SO-8

SQ4284EY

Lead (Pb)-free and halogen-free

(for detailed order number please see www.vishay.com/doc?79771)

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C ^a

_C= 125 °C

Continuous drain current

I_D

7.4

Continuous source current (diode conduction)

Pulsed drain current ^a

I_S

3.5

I_DM

I_AS

Single pulse avalanche current

Single pulse avalanche energy

115

L = 0.1 mH

T_C= 25 °C

E_AS

3.9

Maximum power dissipation ^a

P_D

_C= 125 °C

1.3

Operating junction and storage temperature range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

120

UNIT

Junction-to-ambient

PCB Mount ^b

°C/W

Junction-to-foot (drain)

R_thJF

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %

b. When mounted on 1" square PCB (FR-4 material)

S21-0375-Rev. E, 23-Apr-2021

Document Number: 67334

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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