5秒后页面跳转
SQ3481EV-T1-GE3 PDF预览

SQ3481EV-T1-GE3

更新时间: 2024-11-17 08:17:23
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
12页 217K
描述
SQ3481EV Automotive P-Channel 30 V (D-S) 175 °C MOSFET

SQ3481EV-T1-GE3 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TSOP包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.73
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):7.5 A最大漏源导通电阻:0.043 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):150 pF
JESD-30 代码:R-PDSO-G6元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

SQ3481EV-T1-GE3 数据手册

 浏览型号SQ3481EV-T1-GE3的Datasheet PDF文件第2页浏览型号SQ3481EV-T1-GE3的Datasheet PDF文件第3页浏览型号SQ3481EV-T1-GE3的Datasheet PDF文件第4页浏览型号SQ3481EV-T1-GE3的Datasheet PDF文件第5页浏览型号SQ3481EV-T1-GE3的Datasheet PDF文件第6页浏览型号SQ3481EV-T1-GE3的Datasheet PDF文件第7页 
SQ3481EV  
Vishay Siliconix  
www.vishay.com  
Automotive P-Channel 30 V (D-S) 175 °C MOSFET  
FEATURES  
Halogen-free According to IEC 61249-2-21  
Definition  
• TrenchFET® Power MOSFET  
• AEC-Q101 Qualifiedc  
PRODUCT SUMMARY  
VDS (V)  
- 30  
0.043  
0.070  
- 7.5  
RDS(on) () at VGS = - 10 V  
RDS(on) () at VGS = - 4.5 V  
• 100 % Rg and UIS Tested  
• Compliant to RoHS Directive 2002/95/EC  
ID (A)  
Configuration  
Single  
(4) S  
TSOP-6  
Top View  
1
2
3
6
(3) G  
3 mm  
5
4
2.85 mm  
Marking Code: 8Exxx  
(1, 2, 5, 6) D  
P-Channel MOSFET  
ORDERING INFORMATION  
Package  
TSOP-6  
Lead (Pb)-free and Halogen-free  
SQ3481EV-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
- 30  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
- 7.5  
- 4.3  
- 5.2  
- 30  
Continuous Drain Current  
ID  
T
C = 125 °C  
Continuous Source Current  
Pulsed Drain Currenta  
IS  
A
IDM  
IAS  
EAS  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
- 15  
L = 0.1 mH  
TC = 25 °C  
11  
mJ  
W
4
Maximum Power Dissipationa  
PD  
T
C = 125 °C  
1.3  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
110  
36  
UNIT  
Junction-to-Ambient  
PCB Mountb  
°C/W  
Junction-to-Foot (Drain)  
RthJF  
Notes  
a. Pulse test; pulse width 300 μs, duty cycle 2 %.  
b. When mounted on 1" square PCB (FR-4 material).  
c. Parametric verification ongoing.  
S11-2124-Rev. B, 07-Nov-11  
Document Number: 71508  
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SQ3481EV-T1-GE3相关器件

型号 品牌 获取价格 描述 数据表
SQ3493EV VISHAY

获取价格

Automotive P-Channel 20 V (D-S) 175 °C MOSFET
SQ3495EV VISHAY

获取价格

Automotive P-Channel 30 V (D-S) 175 °C MOSFET
SQ3585EV VISHAY

获取价格

Automotive N- and P-Channel 20 V (D-S) MOSFET
SQ3866A SEMICOA

获取价格

Chip Type 2C3866A Geometry 1007 Polarity NPN
SQ3866AF SEMICOA

获取价格

Chip Type 2C3866A Geometry 1007 Polarity NPN
SQ3960 SEMICOA

获取价格

Chip Type 2C3960 Geometry 0003 Polarity NPN
SQ3960F SEMICOA

获取价格

Chip Type 2C3960 Geometry 0003 Polarity NPN
SQ3985EV VISHAY

获取价格

Automotive Dual P-Channel 20 V (D-S) 175 °C M
SQ3987EV VISHAY

获取价格

Automotive Dual P-Channel 30 V (D-S) 175 °C M
SQ3989EV VISHAY

获取价格

Automotive Dual P-Channel 30 V (D-S) 175 °C M