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SQ3481EV-T1-GE3 PDF预览

SQ3481EV-T1-GE3

更新时间: 2024-09-29 08:17:23
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
12页 217K
描述
SQ3481EV Automotive P-Channel 30 V (D-S) 175 °C MOSFET

SQ3481EV-T1-GE3 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TSOP包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.73
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):7.5 A最大漏源导通电阻:0.043 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):150 pF
JESD-30 代码:R-PDSO-G6元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

SQ3481EV-T1-GE3 数据手册

 浏览型号SQ3481EV-T1-GE3的Datasheet PDF文件第2页浏览型号SQ3481EV-T1-GE3的Datasheet PDF文件第3页浏览型号SQ3481EV-T1-GE3的Datasheet PDF文件第4页浏览型号SQ3481EV-T1-GE3的Datasheet PDF文件第5页浏览型号SQ3481EV-T1-GE3的Datasheet PDF文件第6页浏览型号SQ3481EV-T1-GE3的Datasheet PDF文件第7页 
SQ3481EV  
Vishay Siliconix  
www.vishay.com  
Automotive P-Channel 30 V (D-S) 175 °C MOSFET  
FEATURES  
Halogen-free According to IEC 61249-2-21  
Definition  
• TrenchFET® Power MOSFET  
• AEC-Q101 Qualifiedc  
PRODUCT SUMMARY  
VDS (V)  
- 30  
0.043  
0.070  
- 7.5  
RDS(on) () at VGS = - 10 V  
RDS(on) () at VGS = - 4.5 V  
• 100 % Rg and UIS Tested  
• Compliant to RoHS Directive 2002/95/EC  
ID (A)  
Configuration  
Single  
(4) S  
TSOP-6  
Top View  
1
2
3
6
(3) G  
3 mm  
5
4
2.85 mm  
Marking Code: 8Exxx  
(1, 2, 5, 6) D  
P-Channel MOSFET  
ORDERING INFORMATION  
Package  
TSOP-6  
Lead (Pb)-free and Halogen-free  
SQ3481EV-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
- 30  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
- 7.5  
- 4.3  
- 5.2  
- 30  
Continuous Drain Current  
ID  
T
C = 125 °C  
Continuous Source Current  
Pulsed Drain Currenta  
IS  
A
IDM  
IAS  
EAS  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
- 15  
L = 0.1 mH  
TC = 25 °C  
11  
mJ  
W
4
Maximum Power Dissipationa  
PD  
T
C = 125 °C  
1.3  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
110  
36  
UNIT  
Junction-to-Ambient  
PCB Mountb  
°C/W  
Junction-to-Foot (Drain)  
RthJF  
Notes  
a. Pulse test; pulse width 300 μs, duty cycle 2 %.  
b. When mounted on 1" square PCB (FR-4 material).  
c. Parametric verification ongoing.  
S11-2124-Rev. B, 07-Nov-11  
Document Number: 71508  
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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