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SQ3989EV PDF预览

SQ3989EV

更新时间: 2024-11-17 14:55:35
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威世 - VISHAY /
页数 文件大小 规格书
8页 308K
描述
Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET

SQ3989EV 数据手册

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SQ3989EV  
Vishay Siliconix  
www.vishay.com  
Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET  
FEATURES  
• TrenchFET® power MOSFET  
TSOP-6 Dual  
D2  
4
S1  
• AEC-Q101 qualified  
5
D1  
• 100 % Rg and UIS tested  
6
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
3
G2  
2
S
1
S
2
S2  
1
G1  
Top View  
Marking code: 9B  
G
G
2
1
PRODUCT SUMMARY  
VDS (V)  
-30  
R
DS(on) (Ω) at VGS = -10 V  
DS(on) (Ω) at VGS = -4.5 V  
-0.155  
-0.300  
-2.32  
Dual  
R
ID (A)  
D
1
D
2
Configuration  
P-Channel MOSFET  
P-Channel MOSFET  
ORDERING INFORMATION  
Package  
TSOP-6  
SQ3989EV  
(for detailed order number please see www.vishay.com/doc?79771)  
Lead (Pb)-free and halogen-free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
-30  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
-2.5  
Continuous drain current (TJ = 150 °C) a  
ID  
TC = 125 °C  
-1.5  
A
Pulsed drain current  
Continuous source current (diode conduction) a  
IDM  
IS  
-10.2  
-2.1  
TC = 25 °C  
1.67  
Maximum power dissipation a  
PD  
W
TC = 125 °C  
0.56  
Unclamped inductive surge UIS  
IAV  
-7  
A
Operating junction and storage temperature range  
TJ, Tstg  
-55 to +175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction-to-ambient a  
SYMBOL  
RthJA  
LIMIT  
150  
90  
UNIT  
Steady state  
Steady state  
°C/W  
Maximum junction-to-foot (drain)  
RthJF  
Note  
a. Surface mounted on 1" x 1" FR4 board  
S22-0224-Rev. E, 07-Mar-2022  
Document Number: 75059  
1
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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