Datasheet > SQ4153EY

SQ4153EY

更新时间： 2024-11-17 14:53:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	209K
描述
Automotive P-Channel 12 V (D-S) 175 °C MOSFET

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SQ4153EY 数据手册

SQ4153EY

Vishay Siliconix

www.vishay.com

Automotive P-Channel 12 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®power MOSFET

SO-8 Single

• AEC-Q101 qualified

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

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PRODUCT SUMMARY

V_DS(V)

-12

_DS(on)(Ω) at V_GS= -4.5 V

_DS(on)(Ω) at V_GS= -2.5 V

_DS(on)(Ω) at V_GS= -1.8 V

0.00832

0.01000

0.01430

-25

I_D(A)

P-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

SO-8

SQ4153EY

Lead (Pb)-free and halogen-free

(for detailed order number please see www.vishay.com/doc?79771)

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-12

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

-25

Continuous drain current ^a

I_D

T_C= 125 °C

-14

Continuous source current (diode conduction) ^a

Pulsed drain current ^b

I_S

-6.5

-100

-19

I_DM

I_AS

Single pulse avalanche current

Single pulse avalanche energy

L = 0.1 mH

E_AS

T_C= 25 °C

7.1

Maximum power dissipation ^b

P_D

T_C= 125 °C

2.3

Operating junction and storage temperature range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-ambient

PCB Mount ^c

°C/W

Junction-to-foot (drain)

R_thJF

Notes

a. Package limited

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %

c. When mounted on 1" square PCB (FR4 material)

S21-0375-Rev. C, 23-Apr-2021

Document Number: 66897

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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