Datasheet > SQ4425EY

SQ4425EY

更新时间： 2024-11-16 12:22:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	258K
描述
Automotive P-Channel 30 V (D-S) 175 Â°C MOSFET

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SQ4425EY 数据手册

SQ4425EY

Vishay Siliconix

www.vishay.com

Automotive P-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®Power MOSFET

• AEC-Q101 Qualified^c

PRODUCT SUMMARY

V_DS(V)

- 30

0.012

0.019

- 18

R_DS(on)() at V_GS= - 10 V

R_DS(on)() at V_GS= - 4.5 V

• 100 % R_gand UIS Tested

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

I_D(A)

Configuration

Single

SO-8

Top View

P-Channel MOSFET

ORDERING INFORMATION

Package

SO-8

Lead (Pb)-free and Halogen-free

SQ4425EY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

- 30

Gate-Source Voltage

V_GS

- 18

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 125 °C

- 10

Continuous Source Current (Diode Conduction)

Pulsed Drain Current^a

I_S

- 6

I_DM

I_AS

E_AS

- 70

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

- 38

L = 0.1 mH

T_C= 25 °C

6.8

Maximum Power Dissipation^a

P_D

_C= 125 °C

2.2

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient

PCB Mount^b

°C/W

Junction-to-Foot (Drain)

R_thJF

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR-4 material).

c. Parametric verification ongoing.

S12-1845-Rev. B, 30-Jul-12

Document Number: 72179

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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