5秒后页面跳转
SQ4435BEY-T1-GE3 PDF预览

SQ4435BEY-T1-GE3

更新时间: 2024-11-16 21:20:35
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
7页 108K
描述
TRANSISTOR 15000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal

SQ4435BEY-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):15 A
最大漏极电流 (ID):15 A最大漏源导通电阻:0.018 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):315 pF
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):6.8 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

SQ4435BEY-T1-GE3 数据手册

 浏览型号SQ4435BEY-T1-GE3的Datasheet PDF文件第2页浏览型号SQ4435BEY-T1-GE3的Datasheet PDF文件第3页浏览型号SQ4435BEY-T1-GE3的Datasheet PDF文件第4页浏览型号SQ4435BEY-T1-GE3的Datasheet PDF文件第5页浏览型号SQ4435BEY-T1-GE3的Datasheet PDF文件第6页浏览型号SQ4435BEY-T1-GE3的Datasheet PDF文件第7页 
SQ4435BEY  
Vishay Siliconix  
Automotive  
P-Channel 30 V (D-S) 175 °C MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
Halogen-free According to IEC 61249-2-21  
Definition  
• TrenchFET® Power MOSFET  
- 30  
0.018  
0.031  
- 15  
R
DS(on) () at VGS = - 10 V  
RDS(on) () at VGS = - 4.5 V  
ID (A)  
• Compliant to RoHS Directive 2002/95/EC  
• AEC-Q101 Qualifiedc  
Configuration  
Single  
• Find out more about Vishay’s Automotive  
Grade Product Requirements at:  
www.vishay.com/applications  
S
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
D
Top View  
P-Channel MOSFET  
ORDERING INFORMATION  
Package  
SO-8  
SQ4435BEY-T1-GE3  
Lead (Pb)-free and Halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
- 30  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
- 15  
Continuous Drain Current  
ID  
T
C = 125 °C  
- 8.7  
- 6.2  
- 60  
Continuous Source Current (Diode Conduction)  
Pulsed Drain Currenta  
IS  
A
IDM  
IAS  
EAS  
Single Pulse Avalanche Energy  
Single Pulse Avalanche Current  
- 25  
L = 0.1 mH  
TC = 25 °C  
31  
mJ  
W
6.8  
Maximum Power Dissipationa  
PD  
T
C = 125 °C  
2.3  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
85  
UNIT  
Junction-to-Ambient  
PCB Mountb  
°C/W  
Junction-to-Foot (Drain)  
RthJF  
22  
Notes  
a. Pulse test; pulse width 300 μs, duty cycle 2 %.  
b. When mounted on 1" square PCB (FR-4 material).  
c. Parametric verification ongoing.  
Document Number: 67004  
S10-2101-Rev. A, 27-Sep-10  
www.vishay.com  
1

与SQ4435BEY-T1-GE3相关器件

型号 品牌 获取价格 描述 数据表
SQ4435EY VISHAY

获取价格

Automotive P-Channel 30 V (D-S) 175 °C MOSFE
SQ4435EY-T1_GE3 VISHAY

获取价格

Small Signal Field-Effect Transistor, 15A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-
SQ4435EY-T1-GE3 VISHAY

获取价格

TRANSISTOR 15000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMP
SQ4470EY FREESCALE

获取价格

Automotive N-Channel 60V (D-S) 175 °C MOSFET
SQ4470EY VISHAY

获取价格

Automotive N-Channel 60 V (D-S) 175 °C MOSFE
SQ4470EY-T1_GE3 VISHAY

获取价格

Small Signal Field-Effect Transistor, 16A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-
SQ4470EY-T1-GE3 VISHAY

获取价格

MOSFET N-CH 60V 16A 8SOIC
SQ4483BEEY VISHAY

获取价格

Automotive P-Channel 30 V (D-S) 175 °C MOSFE
SQ4483BEEY-T1-GE3 VISHAY

获取价格

Small Signal Field-Effect Transistor,
SQ4483EEY VISHAY

获取价格

Automotive P-Channel 30 V (D-S) 175 °C MOSFE