Datasheet > SQ4401CEY

SQ4401CEY

更新时间： 2024-11-17 14:54:11

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威世 - VISHAY		/
页数	文件大小	规格书
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描述
Automotive P-Channel 40 V (D-S) 175 °C MOSFET

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SQ4401CEY 数据手册

SQ4401CEY

Vishay Siliconix

www.vishay.com

Automotive P-Channel 40 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®power MOSFET

SO-8 Single

• AEC-Q101 qualified

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

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PRODUCT SUMMARY

V_DS(V)

-40

R_DS(on)() at V_GS= - 10 V

0.014

0.023

-17.3

Single

R_DS(on)() at V_GS= - 4.5 V

P-Channel MOSFET

I_D(A)

Configuration

ORDERING INFORMATION

Package

SO-8

SQ4401CEY

Lead (Pb)-free and halogen-free

(for detailed order number please see www.vishay.com/doc?79771)

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

V_DS

-40

Gate-source voltage

V_GS

-17.3

-10

T_C= 25 °C

Continuous drain current

I_D

T_C= 125 °C

Continuous source current (diode conduction)

Pulsed drain current ^a

I_S

-6.5

I_DM

I_AS

E_AS

-69

Single pulse avalanche current

Single pulse avalanche energy

-30

L = 0.1 mH

T_C= 25 °C

7.14

Maximum power dissipation

P_D

T_C= 125 °C

2.4

Operating junction and storage temperature range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-ambient

PCB mount ^b

°C/W

Junction-to-foot (drain)

R_thJF

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %

b. When mounted on 1" square PCB (FR-4 material)

S23-0472-Rev. B, 19-Jun-2023

Document Number: 62016

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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