Datasheet > SQ4431EY

SQ4431EY

更新时间： 2024-09-29 14:55:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	215K
描述
Automotive P-Channel 30 V (D-S) 175 °C MOSFET

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SQ4431EY 数据手册

SQ4431EY

Vishay Siliconix

www.vishay.com

Automotive P-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®power MOSFET

SO-8 Single

• 100 % R_gand UIS tested

• AEC-Q101 qualified ^c

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

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PRODUCT SUMMARY

V_DS(V)

-30

R_DS(on)(Ω) at V_GS= -10 V

R_DS(on)(Ω) at V_GS= -4.5 V

0.030

0.052

-10.8

Single

P-Channel MOSFET

I_D(A)

Configuration

ORDERING INFORMATION

Package

SO-8

SQ4431EY

Lead (Pb)-free and halogen-free

(for detailed order number please see www.vishay.com/doc?79771)

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

-30

V_GS

T_C= 25 °C

_C= 125 °C

-10.8

Continuous drain current

I_D

-6.2

Continuous source current (diode conduction)

Pulsed drain current ^a

I_S

-5.4

I_DM

I_AS

-43.2

Single pulse avalanche current

Single pulse avalanche energy

-21

L = 0.1 mH

T_C= 25 °C

E_AS

Maximum power dissipation ^a

P_D

_C= 125 °C

Operating junction and storage temperature range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-ambient

PCB mount ^b

°C/W

Junction-to-foot (drain)

R_thJF

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %

b. When mounted on 1" square PCB (FR-4 material)

S21-0849-Rev. D, 16-Aug-2021

Document Number: 65527

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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