Datasheet > SQ4282EY

SQ4282EY

更新时间： 2024-11-16 12:24:19

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
10页	861K
描述
Automotive Dual N-Channel 30 V (D-S) 175 Â°C MOSFET

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数据手册

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SQ4282EY 数据手册

SQ4282EY

Automotive Dual N-Channel

30 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®Power MOSFET

PRODUCT SUMMARY

V_DS(V)

0.0123

0.0135

• AEC-Q101 Qualified

_DS(on)() at V_GS= 10 V

R_DS(on)() at V_GS= 4.5 V

_D(A)

Configuration

• 100 % R_gand UIS Tested

• Material categorization:

For definitions of compliance please see

Dual

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SO-8

Top View

N-Channel MOSFET

ORDERING INFORMATION

Package

SO-8

SQ4282EY-T1-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

T_C= 25 °C^a

T_C= 125 °C

Continuous Drain Current

I_D

Continuous Source Current (Diode Conduction)

Pulsed Drain Current^a

I_S

3.5

3.9

1.3

I_DM

I_AS

E_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

Maximum Power Dissipation^a

P_D

T_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

120

UNIT

Junction-to-Ambient

PCB Mount^b

°C/W

Junction-to-Foot (Drain)

R_thJF

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR-4 material).

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