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SQ4330EY PDF预览

SQ4330EY

更新时间: 2024-11-16 12:24:19
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
10页 898K
描述
Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET

SQ4330EY 数据手册

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SQ4330EY  
Automotive Dual N-Channel  
30 V (D-S) 175 °C MOSFET  
PRODUCT SUMMARY  
VDS (V)  
30  
R
DS(on) () at VGS = 10 V  
RDS(on) () at VGS = 4.5 V  
D (A)  
Configuration  
0.016  
0.022  
8.0  
FEATURES  
Halogen-free According to IEC 61249-2-21  
Definition  
• TrenchFET® Power MOSFET  
• AEC-Q101 Qualifiedd  
I
Dual  
D
1
D
2
SO-8  
• 100 % Rg and UIS Tested  
• Compliant to RoHS Directive 2002/95/EC  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
1
2
G
S
S
Top View  
1
2
N-Channel MOSFET  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
SO-8  
SQ4330EY-T1-GE3  
Lead (Pb)-free and Halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
VDS  
30  
V
Gate-Source Voltage  
VGS  
20  
TC = 25 °Ca  
TC = 125 °C  
8
Continuous Drain Current  
ID  
7
Continuous Source Current (Diode Conduction)  
Pulsed Drain Currentb  
IS  
4
A
IDM  
IAS  
EAS  
32  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
34  
L = 0.1 mH  
TC = 25 °C  
57  
4.3  
mJ  
W
Maximum Power Dissipationb  
PD  
T
C = 125 °C  
1.4  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
110  
35  
UNIT  
Junction-to-Ambient  
PCB Mountc  
°C/W  
Junction-to-Foot (Drain)  
RthJF  
Notes  
a. Package limited.  
b. Pulse test; pulse width 300 μs, duty cycle 2 %.  
c. When mounted on 1" square PCB (FR-4 material).  
d. Parametric verification ongoing.  
www.freescale.net.cn  
1 / 10  

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