Datasheet > SQ4284EY

SQ4284EY

更新时间： 2024-09-28 12:24:19

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
10页	850K
描述
Automotive Dual N-Channel 40 V (D-S) 175 Â°C MOSFET

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SQ4284EY 数据手册

SQ4284EY

Automotive Dual N-Channel

40 V (D-S) 175 °C MOSFET

PRODUCT SUMMARY

V_DS(V)

0.028

0.032

_DS(on)() at V_GS= 10 V

R_DS(on)() at V_GS= 4.5 V

_D(A)

Configuration

FEATURES

• TrenchFET^®Power MOSFET

• AEC-Q101 Qualified

• 100 % R_gand UIS Tested

• Material categorization:

Dual

For definitions of compliance please see

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SO-8

Top View

N-Channel MOSFET

ORDERING INFORMATION

Package

SO-8

Lead (Pb)-free and Halogen-free

SQ4284EY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

T_C= 25 °C^a

T_C= 125 °C

Continuous Drain Current

I_D

5.4

Continuous Source Current (Diode Conduction)

Pulsed Drain Current^a

I_S

3.5

I_DM

I_AS

E_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

115

L = 0.1 mH

T_C= 25 °C

3.9

Maximum Power Dissipation^a

P_D

_C= 125 °C

1.3

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

120

UNIT

Junction-to-Ambient

PCB Mount^b

°C/W

Junction-to-Foot (Drain)

R_thJF

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR-4 material).

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