Datasheet > SQ3985EV

SQ3985EV

更新时间： 2024-11-17 14:54:27

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威世 - VISHAY		/
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描述
Automotive Dual P-Channel 20 V (D-S) 175 °C MOSFET

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SQ3985EV 数据手册

SQ3985EV

Vishay Siliconix

www.vishay.com

Automotive Dual P-Channel 20 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®power MOSFET

TSOP-6 Dual

D₂

• AEC-Q101 qualified

S₁

• 100 % R_gand UIS tested

D₁

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

G₂

S₂

G₁

Top View

Marking code: 8T

PRODUCT SUMMARY

V_DS(V)

-20

_DS(on)(Ω) at V_GS= -4.5 V

_DS(on)(Ω) at V_GS= -2.5 V

_DS(on)(Ω) at V_GS= -1.8 V

0.145

0.200

0.300

-3.9

I_D(A)

P-Channel MOSFET

Configuration

Dual

ORDERING INFORMATION

Package

TSOP-6

SQ3985EV

Lead (Pb)-free and halogen-free

(for detailed order number please see www.vishay.com/doc?79771)

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

-20

V_GS

_C= 25 °C

-3.9

Continuous drain current

I_D

_C= 125 °C

-2.2

Continuous source current (diode conduction) ^a

Pulsed drain current ^b

I_S

-3.7

I_DM

I_AS

-15

Single pulse avalanche current

Single pulse avalanche Energy

-8.5

L = 0.1 mH

E_AS

3.6

T_C= 25 °C

Maximum power dissipation ^b

P_D

T_C= 125 °C

Operating junction and storage temperature range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

166

UNIT

Junction-to-ambient

PCB mount ^c

°C/W

Junction-to-foot (drain)

R_thJC

Notes

a. Package limited

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %

c. When mounted on 1" square PCB (FR4 material)

S21-1246-Rev. B, 10-Jan-2022

Document Number: 63249

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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