Datasheet > SQ3987EV

SQ3987EV

更新时间： 2024-11-17 14:55:03

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威世 - VISHAY		/
页数	文件大小	规格书
8页	305K
描述
Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET

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SQ3987EV 数据手册

SQ3987EV

Vishay Siliconix

www.vishay.com

Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®power MOSFET

TSOP-6 Dual

D₂

S₁

• AEC-Q101 qualified

D₁

• 100 % R_gand UIS tested

• Material categorization: 

for definitions of compliance please see

www.vishay.com/doc?99912

G₂

S₂

G₁

Top View

Marking code: 8X

PRODUCT SUMMARY

V_DS(V)

-30

-0.110

-0.185

-2.75

_DS(on)() at V_GS= -10 V

_DS(on)() at V_GS= -4.5 V

I_D(A)

Configuration

Package

Dual

TSOP-6

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-30

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

-3

Continuous drain current (T_J= 150 °C) ^a

I_D

T_C= 125 °C

-1.74

-11

Pulsed drain current

Continuous source current (diode conduction) ^a

I_DM

I_S

-2.1

1.67

0.56

-5

T_C= 25 °C

Maximum power dissipation ^a

P_D

T_C= 125 °C

Unclamped inductive surge UIS

I_AV

Operating junction and storage temperature range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^a

SYMBOL

R_thJA

LIMIT

150

UNIT

Steady state

°C/W

Maximum junction-to-foot (drain)

R_thJF

Note

a. Surface mounted on 1" x 1" FR4 board

S19-0398-Rev. B, 06-May-2019

Document Number: 75315

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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