Datasheet > SQ3585EV

SQ3585EV

更新时间： 2024-09-29 14:55:35

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威世 - VISHAY		/
页数	文件大小	规格书
11页	332K
描述
Automotive N- and P-Channel 20 V (D-S) MOSFET

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SQ3585EV 数据手册

SQ3585EV

Vishay Siliconix

www.vishay.com

Automotive N- and P-Channel 20 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

TSOP-6 Dual

D₂

S₁

• AEC-Q101 qualified

D₁

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

G₂

S₂

G₁

Top View

PRODUCT SUMMARY

N-CHANNEL

P-CHANNEL

-20

V_DS(V)

_DS(on)(Ω) at V_GS

4.5 V

2.5 V

0.077

0.166

0.120

0.318

_D(A)

3.57

-2.5

Configuration

N- and p-pair

N-Channel MOSFET

P-Channel MOSFET

ORDERING INFORMATION

Package

TSOP-6 Dual

SQ3585EV

Lead (Pb)-free and halogen-free

(for detailed order number please see www.vishay.com/doc?79771)

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

V_DS

N-CHANNEL

P-CHANNEL

UNIT

Drain-source voltage

Gate-source voltage

-20

V_GS

_C= 25 °C

3.57

-2.5

-1.45

-10

Continuous drain current

Pulsed drain current

I_D

T_C= 125 °C

I_DM

I_S

Continuous source current (diode conduction)

2.1

1.67

0.56

3.3

-2.1

1.67

0.56

T_C= 25 °C

Maximum power dissipation

P_D

T_C= 125 °C

Unclamped inductive surge UIS

I_AV

Operating junction and storage temperature range

THERMAL RESISTANCE RATINGS

PARAMETER

T_J, T_stg

-55 to +175

°C

N-CHANNEL

P-CHANNEL

SYMBOL

UNIT

MAX.

150

MAX.

150

Maximum junction-to-ambient ^a

Maximum junction-to-foot (drain)

Steady state

R_thJA

R_thJF

°C/W

Note

a. Surface mounted on 1" x 1" FR4 board

S23-0055-Rev. C, 06-Feb-2023

Document Number: 75126

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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