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SQ3495EV PDF预览

SQ3495EV

更新时间: 2024-11-17 14:53:47
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威世 - VISHAY /
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描述
Automotive P-Channel 30 V (D-S) 175 °C MOSFET

SQ3495EV 数据手册

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SQ3495EV  
Vishay Siliconix  
www.vishay.com  
Automotive P-Channel 30 V (D-S) 175 °C MOSFET  
FEATURES  
• TrenchFET® power MOSFET  
TSOP-6 Single  
S
4
• AEC-Q101 qualified  
D
5
• 100 % Rg and UIS tested  
D
6
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
3
G
2
D
1
D
(1, 2, 5, 6) D  
Top View  
Marking Code: 9F  
(3) G  
PRODUCT SUMMARY  
VDS (V)  
-30  
0.021  
0.033  
-8  
RDS(on) (Ω) at VGS = -4.5 V  
RDS(on) (Ω) at VGS = -2.5 V  
P-Channel MOSFET  
ID (A)  
(4) S  
Configuration  
Package  
Single  
TSOP-6  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
-30  
V
VGS  
12  
T
C = 25 °C  
-8  
Continuous drain current  
ID  
T
C = 125 °C  
-7  
-4.5  
Continuous source current (diode conduction)  
Pulsed drain current  
IS  
A
IDM  
IAS  
EAS  
-32  
Single pulse avalanche current  
Single pulse avalanche Energy  
-19.5  
19  
L = 0.1 mH  
mJ  
W
TC = 25 °C  
5
Maximum power dissipation a  
PD  
TC = 125 °C  
1.6  
Operating junction and storage temperature range  
TJ, Tstg  
-55 to +175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
110  
30  
UNIT  
Junction-to-ambient  
PCB mount b  
°C/W  
Junction-to-foot (drain)  
RthJF  
Notes  
a. Pulse test; pulse width 300 μs, duty cycle 2 %  
b. When mounted on 1" square PCB (FR4 material)  
S19-1137-Rev. A, 30-Dec-2019  
Document Number: 77077  
1
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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