Datasheet > SQ3495EV

SQ3495EV

更新时间： 2024-11-17 14:53:47

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描述
Automotive P-Channel 30 V (D-S) 175 °C MOSFET

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SQ3495EV 数据手册

SQ3495EV

Vishay Siliconix

www.vishay.com

Automotive P-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®power MOSFET

TSOP-6 Single

• AEC-Q101 qualified

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

(1, 2, 5, 6) D

Top View

Marking Code: 9F

(3) G

PRODUCT SUMMARY

V_DS(V)

-30

0.021

0.033

-8

R_DS(on)(Ω) at V_GS= -4.5 V

R_DS(on)(Ω) at V_GS= -2.5 V

P-Channel MOSFET

I_D(A)

(4) S

Configuration

Package

Single

TSOP-6

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

-30

V_GS

_C= 25 °C

-8

Continuous drain current

I_D

_C= 125 °C

-7

-4.5

Continuous source current (diode conduction)

Pulsed drain current

I_S

I_DM

I_AS

E_AS

-32

Single pulse avalanche current

Single pulse avalanche Energy

-19.5

L = 0.1 mH

T_C= 25 °C

Maximum power dissipation ^a

P_D

T_C= 125 °C

1.6

Operating junction and storage temperature range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

110

UNIT

Junction-to-ambient

PCB mount ^b

°C/W

Junction-to-foot (drain)

R_thJF

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %

b. When mounted on 1" square PCB (FR4 material)

S19-1137-Rev. A, 30-Dec-2019

Document Number: 77077

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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