Datasheet > SQ3457EV

SQ3457EV

更新时间： 2024-11-17 14:55:31

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威世 - VISHAY		/
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描述
Automotive P-Channel 30 V (D-S) 175 °C MOSFET

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SQ3457EV 数据手册

SQ3457EV

Vishay Siliconix

www.vishay.com

Automotive P-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®power MOSFET

TSOP-6 Single

• AEC-Q101 qualified^d

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

(4) S

Top View

(3) G

PRODUCT SUMMARY

V_DS(V)

-30

R_DS(on)(Ω) at V_GS= 10 V

R_DS(on)(Ω) at V_GS= 4.5 V

I_D(A)

0.065

0.100

- 6.8

(1, 2, 5, 6) D

P-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

TSOP-6

SQ3457EV

Lead (Pb)-free and halogen-free

(for detailed order number please see www.vishay.com/doc?79771)

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

-30

V_GS

T_C= 25 °C

-6.8

-3.9

-6.3

-27

Continuous Drain Current^a

I_D

_C= 125 °C

Continuous Source Current (Diode Conduction)^a

Pulsed Drain Current^b

I_S

I_DM

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

-14

L = 0.1 mH

T_C= 25 °C

E_AS

Maximum Power Dissipation^b

P_D

_C= 125 °C

1.7

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

110

UNIT

Junction-to-Ambient

PCB Mount^c

°C/W

Junction-to-Foot (Drain)

R_thJF

Notes

a. Package limited

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %

c. When mounted on 1" square PCB (FR-4 material)

d. Parametric verification ongoing

S21-1246-Rev. C, 10-Jan-2022

Document Number: 66715

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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