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SQ3460EV PDF预览

SQ3460EV

更新时间: 2024-11-16 09:08:03
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威世 - VISHAY /
页数 文件大小 规格书
11页 209K
描述
Automotive N-Channel 20 V (D-S) 175 °C MOSFET

SQ3460EV 数据手册

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SQ3460EV  
Vishay Siliconix  
www.vishay.com  
Automotive N-Channel 20 V (D-S) 175 °C MOSFET  
FEATURES  
Halogen-free According to IEC 61249-2-21  
Definition  
• TrenchFET® Power MOSFET  
• AEC-Q101 Qualifiedd  
PRODUCT SUMMARY  
VDS (V)  
20  
0.030  
0.034  
0.038  
8
RDS(on) () at VGS = 4.5 V  
RDS(on) () at VGS = 2.5 V  
RDS(on) () at VGS = 1.8 V  
• 100 % Rg and UIS Tested  
ID (A)  
• Compliant to RoHS Directive 2002/95/EC  
Configuration  
Single  
TSOP-6  
Top View  
(1, 2, 5, 6) D  
1
2
3
6
3 mm  
5
4
(3) G  
(4) S  
2.85 mm  
Marking Code: 8Jxxx  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
TSOP-6  
Lead (Pb)-free and Halogen-free  
SQ3460EV-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
VDS  
20  
V
Gate-Source Voltage  
VGS  
8
TC = 25 °Ca  
TC = 125 °C  
8
Continuous Drain Current  
ID  
4.8  
Continuous Source Current (Diode Conduction)  
Pulsed Drain Currentb  
IS  
4.6  
A
IDM  
IAS  
EAS  
32  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
10  
L = 0.1 mH  
TC = 25 °C  
5
3.6  
mJ  
W
Maximum Power Dissipationb  
PD  
T
C = 125 °C  
1.2  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
110  
41  
UNIT  
Junction-to-Ambient  
PCB Mountc  
°C/W  
Junction-to-Foot (Drain)  
RthJF  
Notes  
a. Package limited.  
b. Pulse test; pulse width 300 μs, duty cycle 2 %.  
c. When mounted on 1" square PCB (FR-4 material).  
d. Parametric verification ongoing.  
S11-2359-Rev. D, 05-Dec-11  
Document Number: 67037  
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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