Datasheet > SQ3456CEV

SQ3456CEV

更新时间： 2024-11-17 14:54:35

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威世 - VISHAY		/
页数	文件大小	规格书
9页	333K
描述
Automotive N-Channel 30 V (D-S) 175 °C MOSFET

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SQ3456CEV 数据手册

SQ3456CEV

Vishay Siliconix

www.vishay.com

Automotive N-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

TSOP-6 Single

• TrenchFET^®power MOSFET

• AEC-Q101 qualified

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

(1, 2, 5, 6) D

Top View

Marking Code: 9Gxxx

(3) G

PRODUCT SUMMARY

V_DS(V)

_DS(on)() at V_GS= 10 V

0.035

0.052

7.8

(4) S

_DS(on)() at V_GS= 4.5 V

N-Channel MOSFET

I_D(A)

Configuration

Single

ORDERING INFORMATION

Package

TSOP-6

SQ3456CEV

Lead (Pb)-free and halogen-free

(for detailed order number please see www.vishay.com/doc?79771)

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

Continuous drain current

V_DS

V_GS

_C= 25 °C

7.8

I_D

_C= 125 °C

4.5

Continuous source current (diode conduction)

Pulsed drain current ^a

I_S

I_DM

I_AS

Single pulse avalanche current

Single pulse avalanche energy

Maximum power dissipation

L = 0.1 mH

E_AS

_C= 25 °C

1.3

P_D

T_C= 125 °C

Operating junction and storage temperature range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

110

UNIT

Junction to ambient

PCB mount ^b

°C/W

Junction to foot (drain)

R_thJF

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %

b. When mounted on 1" square PCB (FR-4 material)

S23-0427-Rev. B, 05-Jun-2023

Document Number: 62060

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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